Influence of channel length and layout on TID for 0.18 mu m NMOS transistors

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Influence of channel length and layout on TID for 0.18 mu m NMOS transistors
	Wu Xue; Lu Wu; Wang Xin; Guo Qi; He Chengfa; Li Yudong; Xi Shanbin; Sun Jing; Wen Lin
刊名	NUCLEAR SCIENCE AND TECHNIQUES
	2013
卷号	24 期号:6
关键词	SCEs DIBL CLM Enclosed-layout
ISSN号	1001-8042
通讯作者	Lu, W
英文摘要	Different channel lengths and layouts on 0.18 mu n NMOS transistors are designed for investigating the dependence of short channel effects (SCEs) on the width of shallow trench isolation (STI) devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited near-ideal I-V characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiation-induced edge-leakage current, however, exhibits significant sensitivity on TID. Moreover, radiation-enhanced drain induced barrier lowering (DIBL) and channel length modulation (CLM) effects are observed on short-channel NMOS transistors. Comparing to stripe-gate layout, enclosed gate layout has excellent radiation tolerance.
收录类别	SCI
WOS记录号	WOS:000333230600004
公开日期	2014-11-11
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/3848]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
作者单位	Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Wu Xue,Lu Wu,Wang Xin,et al. Influence of channel length and layout on TID for 0.18 mu m NMOS transistors[J]. NUCLEAR SCIENCE AND TECHNIQUES,2013,24(6).
APA	Wu Xue.,Lu Wu.,Wang Xin.,Guo Qi.,He Chengfa.,...&Wen Lin.(2013).Influence of channel length and layout on TID for 0.18 mu m NMOS transistors.NUCLEAR SCIENCE AND TECHNIQUES,24(6).
MLA	Wu Xue,et al."Influence of channel length and layout on TID for 0.18 mu m NMOS transistors".NUCLEAR SCIENCE AND TECHNIQUES 24.6(2013).