The study emphasis of this thesis is single-crystal silicon doped by transition-mental, which formed deep level impurities. The doped silicon material has thermal-sensitive characteristic. By selecting appropriate deep level impurities, it is possible to make a kind of NTC silicon material which has high B-value and low electrical resistivity. The electrical parameters of the doped silicon are affected by the initial electricity of the silicon wafers, kinds of transition-mental, surface concentration of diffusion source, the diffusion temperature and time. 1.Transition-mental elements make different energy level in the silicon energy band and form the B-value which relation to the different energy level location. 2.Silicon surface concentration of nickel atoms is invariableness and silicon surface concentration of gold atoms is rising. When silicon surface concentration of gold atoms is 2×10-6mol/cm2, we get the best uniformity material. The initial electricity of silicon wafers is 1Ω•cm, diffusion temperature rising from 900℃ to 1175℃, the electrical resistivity and B-value keeps on increasing. When the diffusion temperature exceeded 1175℃, the electrical resistivity and B-value change smaller. Using hot and cold probes method to test this material, we can see that n-type silicon changes to p-type silicon when the diffusion temperature is above 1175℃. The initial electricity of silicon wafers is 10Ω•cm. when diffusion temperature is 1050℃, the n-type silicon has changed p-type silicon. 3.In the same B-value, such materials’ electrical resistivity is lower than the oxide ceramic thermal-sensitive material. We choose the lower initial electricity of silicon wafers, such as 1Ω•cm. If the diffusion temperature is between 900℃ and 1000℃, the electrical resistivity is under 0.25kΩ•cm and B-value is about 5000k 4.The silicon wafers doped nickel and gold were made into thermistors size at 0805、0603、0402. On the single crystal silicon wafers, metal nickel was deposited by the chemistry deposit method. After the electrode annealed, ohm contact emerge between Si-Ni-Ag structure, positive and negative of the electrode were unanimous.