Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts

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	Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts
	Gong, Wenbin ; Zhang, Wei ; Ren, Cuilan ; Ke, Xuezhi ; Wang, Song ; Huai, Ping ; Zhang, Wenqing ; Zhu, Zhiyuan
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	103 期号:14
ISSN号	0003-6951; 1077-3118
英文摘要	Strain effects on tuning the interface binding as well as the charge doping at metal-graphene contacts have been investigated by using density functional theory calculations. A realizable tensile strain is found to be very effective in enhancing the interface binding as well as shifting the Fermi level. Particularly, an enhancement of the binding energy up to 315% can be achieved because of the dipole-dipole interaction. Our results presented here show that strain is an efficient way to overcome the weak binding problem at metal-graphene interface, and will motivate active experimental efforts in improving the performance of graphene-based devices. (C) 2013 AIP Publishing LLC.
收录类别	SCI
语种	英语
WOS记录号	WOS:000325488500091
公开日期	2014-06-13
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/13914]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Gong, Wenbin,Zhang, Wei,Ren, Cuilan,et al. Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts[J]. APPLIED PHYSICS LETTERS,2013,103(14).
APA	Gong, Wenbin.,Zhang, Wei.,Ren, Cuilan.,Ke, Xuezhi.,Wang, Song.,...&Zhu, Zhiyuan.(2013).Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts.APPLIED PHYSICS LETTERS,103(14).
MLA	Gong, Wenbin,et al."Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts".APPLIED PHYSICS LETTERS 103.14(2013).