Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser
	Chen H. P. ; Cao J. S. ; Guo S. X.
刊名	Acta Physica Sinica
	2013
卷号	62 期号:10
ISSN号	ISBN/1000-3290
英文摘要	The junction temperature rise may not only affect its output power, slope efficiency, threshold current and lifetime, but also will cause the spectral broadening and wavelength shift in a high power semiconductor laser. Therefore, thermal management becomes one of the main problems in research and development of pump laser. In this paper the physical model of the noise power spectrum and junction temperature variation is first established; according to the compression sensing theory, and after sparsing the measured aliasing composite noise signal containing Gaussian white noise and 1/f noise, the basic pursuit denoising algorithm is used to do denoising; through changing the iterations times of the used algorithm and the size of measurement matrix, the curves of the ration between noise voltage power spectrum and junction temperature variation are obtained, thereby avoiding the complexity of direct measurement of the junction temperature. The numerical estimation results can better guid us in doing the thermal management work in high power semiconductor lasers.
收录类别	SCI
公开日期	2014-05-14
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40897]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen H. P.,Cao J. S.,Guo S. X.. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser[J]. Acta Physica Sinica,2013,62(10).
APA	Chen H. P.,Cao J. S.,&Guo S. X..(2013).Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser.Acta Physica Sinica,62(10).
MLA	Chen H. P.,et al."Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser".Acta Physica Sinica 62.10(2013).