New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis

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	New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis
	Zhang X.
刊名	Acs Applied Materials & Interfaces
	2013
卷号	5 期号:24
ISSN号	ISBN/1944-8244
英文摘要	Synthesis and luminescent properties of Ce3+-doped SrAlSi4N7 yellowemitting phosphor are reported. In comparison with YAG: Ce3+, the phosphor exhibits smaller thermal quenching and a broader emission band centering at 555 nm with a bandwidth as large as 115 nm, being suitable for fabricating high color rendering white LED. It is observed in material synthesis that intense luminescence can be achieved only in case of excessive AlN in the raw materials. The role of the excessive AlN is studied. The mechanism for existence of edge-sharing [AlN4] tetrahedral, which is unreasonable according to the aluminum avoidance principle, is discussed in detail.
收录类别	SCI
语种	英语
公开日期	2014-05-14
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40776]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X.. New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis[J]. Acs Applied Materials & Interfaces,2013,5(24).
APA	Zhang X..(2013).New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis.Acs Applied Materials & Interfaces,5(24).
MLA	Zhang X.."New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis".Acs Applied Materials & Interfaces 5.24(2013).