A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage
Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang
刊名Applied Physics A: Materials Science and Processing
2013
卷号110期号:1页码:173-177
学科主题微电子学
收录类别EI
语种英语
公开日期2014-05-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/24910]  
专题半导体研究所_半导体集成技术工程研究中心
推荐引用方式
GB/T 7714
Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang. A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage[J]. Applied Physics A: Materials Science and Processing,2013,110(1):173-177.
APA Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang.(2013).A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage.Applied Physics A: Materials Science and Processing,110(1),173-177.
MLA Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang."A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage".Applied Physics A: Materials Science and Processing 110.1(2013):173-177.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace