Proximity effect at superconducting Sn-Bi2Se3 interface

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	Proximity effect at superconducting Sn-Bi2Se3 interface
	Xiang, T
刊名	PHYSICAL REVIEW B
	2012
卷号	85 期号:10 页码:104508
关键词	TOPOLOGICAL INSULATORS ANDREEV-REFLECTION SURFACE STATES MICROJUNCTIONS CONDUCTANCE TRANSITION TRANSPORT JUNCTIONS SR2RUO4
ISSN号	1098-0121
通讯作者	Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China.
英文摘要	We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.
学科主题	Physics
收录类别	SCI
资助信息	MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS
原文出处	http://dx.doi.org/10.1103/PhysRevB.85.104508
语种	英语
WOS记录号	WOS:000301476700003
公开日期	2014-04-25
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/15143]
专题	理论物理研究所_理论物理所1978-2010年知识产出
推荐引用方式 GB/T 7714	Xiang, T. Proximity effect at superconducting Sn-Bi2Se3 interface[J]. PHYSICAL REVIEW B,2012,85(10):104508.
APA	Xiang, T.(2012).Proximity effect at superconducting Sn-Bi2Se3 interface.PHYSICAL REVIEW B,85(10),104508.
MLA	Xiang, T."Proximity effect at superconducting Sn-Bi2Se3 interface".PHYSICAL REVIEW B 85.10(2012):104508.