Mechanisms in the saturation behavior for low voltage cathodoluminescence | |
Shang CY ; Wang XQ ; Cheng ZY ; Hou ZY ; Lin J | |
刊名 | journal of applied physics |
2013 | |
卷号 | 113期号:9 |
关键词 | FIELD-EMISSION DISPLAYS PHOSPHORS PHOTOLUMINESCENCE SILICA |
ISSN号 | 0021-8979 |
通讯作者 | shang cy |
中文摘要 | the saturation behavior in exciting power p-excite is the specific characteristic in low voltage cathodoluminescence due to the high resistivity of the phosphor, causing the saturation behavior in field emission display. with the increasing of current density j, the saturation behavior in p-excite directly results in the saturation of electron-hole (e-h) generation rate g(num). the e-h generation region x would shrink, resulting in the drastic increase of e-h concentration generation rate g(con), causing the decrease in probability eta(et) of an e-h pair exciting an activator. in addition, the radiative transition probability eta(rad) of an excited activator would be decreased due to the shrinkage of x and increase of temperature. to restrain the saturation behavior in low voltage cathodoluminescence, the ultimate method is to lower the resistivity of the phosphor. by introducing in2o3 conductive component into y2o3:eu3+ phosphor, restrained saturation behavior in cathodoluminescence of y2o3: eu3+ phosphor was effectively achieved. (c) 2013 american institute of physics. [http://dx.doi.org/10.1063/1.4793490] |
收录类别 | SCI收录期刊论文 |
语种 | 英语 |
WOS记录号 | WOS:000316086500001 |
公开日期 | 2014-04-16 |
内容类型 | 期刊论文 |
源URL | [http://ir.ciac.jl.cn/handle/322003/49986] |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Shang CY,Wang XQ,Cheng ZY,et al. Mechanisms in the saturation behavior for low voltage cathodoluminescence[J]. journal of applied physics,2013,113(9). |
APA | Shang CY,Wang XQ,Cheng ZY,Hou ZY,&Lin J.(2013).Mechanisms in the saturation behavior for low voltage cathodoluminescence.journal of applied physics,113(9). |
MLA | Shang CY,et al."Mechanisms in the saturation behavior for low voltage cathodoluminescence".journal of applied physics 113.9(2013). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论