Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers
Qian XR ; Wang T ; Yan DH
刊名organic electronics
2013
卷号14期号:4页码:1052-1056
关键词AMORPHOUS OXIDE SEMICONDUCTORS ROOM-TEMPERATURE ELECTRONICS MOBILITY DISPLAY
ISSN号1566-1199
通讯作者wang t
中文摘要transparent organic thin-film transistors (otfts) with high performance are demonstrated by using high quality polycrystalline 5,6,11,12-tetraphenylnaphthacene (rubrene) as an active layer, which is prepared by weak epitaxy growth (weg) method. benefiting from epitaxial relationship is formed between the inducing layer and the rubrene films, highly oriented and continuous organic polycrystalline thin films with large grains were obtained, which enhances the carrier transport in the film plane. the mobility of devices reaches 1.3 cm(2)/vs, the threshold voltage is lower than -0.9 v and the on-off current ratio (i-on/i-off) is higher than 106 after the photolithography process. moreover, the array consisting of the transparent thin-film transistors displays a high optical transparency more than 65% in visible light regions. the high-performance transparent otfts promote the practical applications for large-area and flexible active-matrix organic light-emitting diodes (amoleds) display. (c) 2013 elsevier b.v. all rights reserved.
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000317347800005
公开日期2014-04-16
内容类型期刊论文
源URL[http://ir.ciac.jl.cn/handle/322003/49945]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
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Qian XR,Wang T,Yan DH. Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers[J]. organic electronics,2013,14(4):1052-1056.
APA Qian XR,Wang T,&Yan DH.(2013).Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers.organic electronics,14(4),1052-1056.
MLA Qian XR,et al."Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers".organic electronics 14.4(2013):1052-1056.
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