Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors

	Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors
	Chang H ; Wang PY ; Li HD ; Zhang JD ; Yan DH
刊名	synthetic metals
	2013
卷号	184 页码:1-4
关键词	FIELD-EFFECT TRANSISTORS POLY(3-HEXYLTHIOPHENE) DEVICE
ISSN号	0379-6779
通讯作者	zhang jd
中文摘要	the p3ht thin films were made by novel solvent vapor assisted spin-coating method that adds several opened bottles of solvent into spin-coater and seals it with a lid. such thin films directly had broader absorption and higher crystallinity. the corresponding thin film transistor had higher mobility of 0.041 cm(2) v-1 s(-1) contrasting to 0.007 cm(2) v-1 s(-1) of device based on p3ht thin film made by normal spin-coating. compared with the solvent vapor annealed p3ht thin film made by normal spin-coating, the thin film made by solvent vapor assisted spin-coating has similar absorption spectrum, x-ray diffraction and device performance, which demonstrates that such novel method is equivalent to the combination of normal spin-coating and solvent vapor annealing. however the fabrication is more simple and the process time is reduced from several hours to several tens of seconds, which is more beneficial for actual mass production. (c) 2013 elsevier b.v. all rights reserved.
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000327921600001
公开日期	2014-04-15
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/49465]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Chang H,Wang PY,Li HD,et al. Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors[J]. synthetic metals,2013,184:1-4.
APA	Chang H,Wang PY,Li HD,Zhang JD,&Yan DH.(2013).Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors.synthetic metals,184,1-4.
MLA	Chang H,et al."Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors".synthetic metals 184(2013):1-4.