Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials | |
Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An | |
刊名 | acta physica sinica
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2013 | |
卷号 | 62期号:11页码:117303 |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-04-09 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24714] ![]() |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials[J]. acta physica sinica,2013,62(11):117303. |
APA | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An.(2013).Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials.acta physica sinica,62(11),117303. |
MLA | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An."Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials".acta physica sinica 62.11(2013):117303. |
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