Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography

	Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography
	Haiyang Zheng and Kui Wu
刊名	ecs solid state lett.
	2013
卷号	2 期号:7 页码:q51-q53
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24795]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Haiyang Zheng and Kui Wu. Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography[J]. ecs solid state lett.,2013,2(7):q51-q53.
APA	Haiyang Zheng and Kui Wu.(2013).Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography.ecs solid state lett.,2(7),q51-q53.
MLA	Haiyang Zheng and Kui Wu."Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography".ecs solid state lett. 2.7(2013):q51-q53.