Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar

	Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
	Cheng, Fang ; Lin, L. Z. ; Zhang, L. B. ; Zhou, Guanghui
刊名	journal of applied physics
	2013
卷号	113 期号:5 页码:053708 - 053708-3
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2014-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24571]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Cheng, Fang,Lin, L. Z.,Zhang, L. B.,et al. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar[J]. journal of applied physics,2013,113(5):053708 - 053708-3.
APA	Cheng, Fang,Lin, L. Z.,Zhang, L. B.,&Zhou, Guanghui.(2013).Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar.journal of applied physics,113(5),053708 - 053708-3.
MLA	Cheng, Fang,et al."Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar".journal of applied physics 113.5(2013):053708 - 053708-3.