The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile

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	The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile
	L. G. Zhu ; Q. M. Hu ; R. Yang
刊名	Journal of Physics-Condensed Matter
	2014
卷号	26 期号:5
关键词	DFT plus U bandgap state diffusion total-energy calculations wave basis-set tio2 dynamics anatase metals oxide bulk
ISSN号	0953-8984
原文出处	://WOS:000330686200019
语种	英语
公开日期	2014-03-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/72511]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	L. G. Zhu,Q. M. Hu,R. Yang. The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile[J]. Journal of Physics-Condensed Matter,2014,26(5).
APA	L. G. Zhu,Q. M. Hu,&R. Yang.(2014).The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile.Journal of Physics-Condensed Matter,26(5).
MLA	L. G. Zhu,et al."The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile".Journal of Physics-Condensed Matter 26.5(2014).