Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

CORC > 金属研究所 > 中国科学院金属研究所

	Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires
	Z. E. Wang ; B. D. Liu ; F. Yuan ; T. Hu ; G. F. Zhang ; B. Dierre ; N. Hirosaki ; T. Sekiguchi ; X. Jiang
刊名	Journal of Luminescence
	2014
卷号	145 页码:208-212
关键词	Sb/P co-doping GaN Nanowires Synthesis Cathodoluminescence light-emitting-diodes visible-light d(10) configuration water decomposition optical-properties photocatalyst electrodes metal films
ISSN号	0022-2313
原文出处	://WOS:000330821200036
语种	英语
公开日期	2014-03-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/72500]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. E. Wang,B. D. Liu,F. Yuan,et al. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires[J]. Journal of Luminescence,2014,145:208-212.
APA	Z. E. Wang.,B. D. Liu.,F. Yuan.,T. Hu.,G. F. Zhang.,...&X. Jiang.(2014).Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires.Journal of Luminescence,145,208-212.
MLA	Z. E. Wang,et al."Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires".Journal of Luminescence 145(2014):208-212.