Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

	Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
	Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
刊名	chin. phys. b
	2013
卷号	22 期号:6 页码:067203
学科主题	半导体材料
收录类别	SCI
公开日期	2014-03-18
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24535]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo. Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor[J]. chin. phys. b,2013,22(6):067203.
APA	Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo.(2013).Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor.chin. phys. b,22(6),067203.
MLA	Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo."Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor".chin. phys. b 22.6(2013):067203.