Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique

	Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique
	Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen
刊名	applied physics letters
	2013
卷号	102 期号:23 页码:232402 - 232402-4
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24508]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique[J]. applied physics letters,2013,102(23):232402 - 232402-4.
APA	Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen.(2013).Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique.applied physics letters,102(23),232402 - 232402-4.
MLA	Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen."Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique".applied physics letters 102.23(2013):232402 - 232402-4.