Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
	Sun, H ; Ji, ZW ; Wang, HN ; Xiao, HD ; Qu, S ; Xu, XG ; Jin, AZ ; Yang, HF
刊名	JOURNAL OF APPLIED PHYSICS
	2013
卷号	114 期号:9
ISSN号	0021-8979
通讯作者	Ji, ZW (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要	Photoluminescence (PL) properties of InGaN/GaN multiple quantum wells are studied. Two InGaN-related peaks are observed in the full PL spectrum and are assigned to the quasi-quantum dots (QDs) (2.42 eV) and the InGaN matrix (2.66 eV), due to a strong phase separation. As the carriers transfer from the matrix down to the QDs, an increase of the QDs-related PL intensity (I-D) accompanied by the decrease of the matrix-related PL intensity (I-M) results. A slight increase of the total PL intensity is also observed, and is attributed to the QDs providing deep potential levels to suppress the outflow of carriers toward surrounding nonradiative centers. A piezoelectric field resulting from the high indium content inside the QDs is observed, which is speculated from Coulomb screening effect. Additionally, we find that the sublinear dependence of the I-D on excitation power (P) is due to the saturation of the QDs states, while the superlinear dependence of the I-M on P is simultaneously attributed to the suppression of the carriers transferring from the matrix to the QDs and the saturation of the nonradiative centers in the matrix. (C) 2013 AIP Publishing LLC.
资助信息	National Natural Science Foundation of China [10874101]; Specialized Research Fund for the Doctoral Program of Higher Education [20120131110006]; Key Science and technology program of Shandong province, China [2012GGX10228]; National Basic Research Program of China (973 Program) [2009CB930503]
语种	英语
公开日期	2014-01-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57618]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Sun, H,Ji, ZW,Wang, HN,et al. Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2013,114(9).
APA	Sun, H.,Ji, ZW.,Wang, HN.,Xiao, HD.,Qu, S.,...&Yang, HF.(2013).Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells.JOURNAL OF APPLIED PHYSICS,114(9).
MLA	Sun, H,et al."Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells".JOURNAL OF APPLIED PHYSICS 114.9(2013).