Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes

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	Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes
	Wang, Y ; Yin, XL ; Le Roy, D ; Jiang, J ; Wei, HX ; Liou, SH ; Han, XF
刊名	JOURNAL OF APPLIED PHYSICS
	2013
卷号	113 期号:13
ISSN号	0021-8979
通讯作者	Han, XF (reprint author), Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.
中文摘要	The [Co/Pt](n) multilayer based perpendicular magnetic tunnel junction stacks with wedged Co60Fe20B20 insertions up to 2 nm, and corresponding perpendicular magnetic tunnel junctions were magnetically and electrically investigated. The focus is on the influence of CoFeB insertions in the free and reference electrodes on the overall junction magnetization reversal and magnetoresistance response. The exchange spring behavior was revealed as the Co60Fe20B20 spins canting towards the in-plane direction in the [Co/Pt](n)/Co60Fe20B20 hard/soft perpendicular magnetic electrodes. The broad range thickness of wedged Co60Fe20B20 insertion enables to reveal the critical transition, in particular, from rigid coupling to exchange spring coupling. With the help of 375 degrees C annealing under 10 kOe magnetic field, the recovery from distinct multi-domain structure to nearly single domain structure was distinctly observed in the unpatterned perpendicular magnetic tunnel junction (p-MTJ) films with CoFeB thickness t(CFB) >= 1.5 nm. Meanwhile, for the corresponding patterned perpendicular magnetic tunnel junctions with AlOx barrier, the tunnel magnetoresistance (TMR) ratio exhibited an intense enhancement over 100%. The TMR results and spin configurations were illustrated using an exchange spring model in both magnetic electrodes. The presented study shows the benefit of using exchange spring magnetic electrodes in perpendicular magnetic tunnel junction on their performance. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798507]
资助信息	Department of Defense (Army Research Office) [W911NF-09-2-0039, W911NF-10-2-0099]; National Science Foundation MRSEC [DMR-0820521]; MOST of China [2010CB934400]; National Natural Science Foundation of China [NSFC] [10934099, 51021061, 10904167, 11174341]; NSFC [10911130234, F040803]; EPSRC of United Kingdom [10911130234]; ANR of France [F040803]
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57194]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, Y,Yin, XL,Le Roy, D,et al. Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes[J]. JOURNAL OF APPLIED PHYSICS,2013,113(13).
APA	Wang, Y.,Yin, XL.,Le Roy, D.,Jiang, J.,Wei, HX.,...&Han, XF.(2013).Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes.JOURNAL OF APPLIED PHYSICS,113(13).
MLA	Wang, Y,et al."Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes".JOURNAL OF APPLIED PHYSICS 113.13(2013).