SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

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	SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
	CHEN, QJ ; YANG, J ; LIN, ZD
刊名	APPLIED PHYSICS LETTERS
	1995
卷号	67 期号:13 页码:1853
关键词	BIAS-ENHANCED NUCLEATION GROWTH SURFACES
ISSN号	0003-6951
通讯作者	CHEN, QJ (reprint author), CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,POB 603-8,BEIJING 100080,PEOPLES R CHINA.
中文摘要	Oriented diamond films were achieved on Si(001) and Si(111) substrates via hot filament chemical vapor deposition (HFCVD) with the orientation relationship of dia[110]/Si[110] and dia(001)/Si(001) for Si(001), and of dia(1(1) over bar0$)/Si(1(1) over bar0$) and dia(111)/Si(111) for Si(111). The substrates were negatively biased relative to the filament during the nucleation stage. The as-grown films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The role of negative bias is discussed in light of the differences between HFCVD and microwave plasma CVD. In conclusion, the importance of the electron emission from the diamond coating on the substrate holder is highlighted, while the ion bombardment is eliminated as a main factor based on our experiments. (C) 1995 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/54454]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	CHEN, QJ,YANG, J,LIN, ZD. SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS,1995,67(13):1853.
APA	CHEN, QJ,YANG, J,&LIN, ZD.(1995).SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION.APPLIED PHYSICS LETTERS,67(13),1853.
MLA	CHEN, QJ,et al."SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION".APPLIED PHYSICS LETTERS 67.13(1995):1853.