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Superconductivity in one-atomic-layer metal films grown on Si(111)
Zhang, T ; Cheng, P ; Li, WJ ; Sun, YJ ; Wang, G ; Zhu, XG ; He, K ; Wang, LL ; Ma, XC ; Chen, X ; Wang, YY ; Liu, Y ; Lin, HQ ; Jia, JF ; Xue, QK
刊名NATURE PHYSICS
2010
卷号6期号:2页码:104
关键词THIN-FILMS PB TEMPERATURE TRANSITION LIMIT
ISSN号1745-2473
通讯作者Chen, X (reprint author), Tsinghua Univ, Dept Phys, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China.
中文摘要The two-dimensional (2D) superconducting state is a fragile state of matter susceptible to quantum phase fluctuations. Although superconductivity has been observed in ultrathin metal films down to a few layers(1-10), it is still not known whether a single layer of ordered metal atoms, which represents the ultimate 2D limit of a crystalline film, could be superconducting. Here we report scanning tunnelling microscopy measurements on single atomic layers of Pb and In grown epitaxially on Si(111) substrate, and demonstrate unambiguously that superconductivity does exist at such a 2D extreme. The film shows a superconducting transition temperature of 1.83 K for an atom areal density n = 10.44 Pb atoms nm(-2), 1.52 K for n = 9.40 Pb atoms nm(-2) and 3.18 K for n = 9.40 In atoms nm(-2), respectively. We confirm the occurrence of superconductivity by the presence of superconducting vortices under magnetic field. In situ angle-resolved photoemission spectroscopy measurements reveal that the observed superconductivity is due to the interplay between the Pb-Pb (In-In) metallic and the Pb-Si (In-Si) covalent bondings.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/54051]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, T,Cheng, P,Li, WJ,et al. Superconductivity in one-atomic-layer metal films grown on Si(111)[J]. NATURE PHYSICS,2010,6(2):104.
APA Zhang, T.,Cheng, P.,Li, WJ.,Sun, YJ.,Wang, G.,...&Xue, QK.(2010).Superconductivity in one-atomic-layer metal films grown on Si(111).NATURE PHYSICS,6(2),104.
MLA Zhang, T,et al."Superconductivity in one-atomic-layer metal films grown on Si(111)".NATURE PHYSICS 6.2(2010):104.
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