Structural phase transitions of BaNbxTi(1-x)O(3)(0.0 <= x <= 0.5) thin films

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	Structural phase transitions of BaNbxTi(1-x)O(3)(0.0 <= x <= 0.5) thin films
	Guo, HZ ; Liu, LF ; Ding, S ; Lu, HB ; Zhou, YL ; Cheng, BL ; Chen, ZH
刊名	JOURNAL OF APPLIED PHYSICS
	2004
卷号	96 期号:6 页码:3404
关键词	NB-DOPED BATIO3 MOLECULAR-BEAM EPITAXY PULSED-LASER DEPOSITION ELECTRICAL-PROPERTIES BARIUM-TITANATE RAMAN-SPECTRA GROWTH FERROELECTRICITY RESISTIVITY SYSTEM
ISSN号	0021-8979
通讯作者	Chen, ZH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 10008, Peoples R China.
中文摘要	The phase transition behavior of BaNbxTi1-xO3 (BNTO) (0.0less than or equal toxless than or equal to0.50) thin films grown on MgO substrates by laser molecular beam epitaxy was systematically investigated by using x-ray diffraction (XRD) and micro-Raman spectroscopy. The asymmetric rocking XRD scan measurements show that with an increase of Nb-doped content, the lattice parameters c and a increase while c/a ratio decreases, indicating a decrease of tetragonality of the BNTO films. The intensity of Raman signal decreases and the width of the bands broaden with increase of Nb-doped content. The results of XRD and Raman spectra indicate that at room temperature BNTO thin films with Nbless than or equal to10 at. % have tetragonal structure, however, for Nbgreater than or equal to20 at. %, BNTO thin films exhibit typical disordering cubic structure. (C) 2004 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53329]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Guo, HZ,Liu, LF,Ding, S,et al. Structural phase transitions of BaNbxTi(1-x)O(3)(0.0 <= x <= 0.5) thin films[J]. JOURNAL OF APPLIED PHYSICS,2004,96(6):3404.
APA	Guo, HZ.,Liu, LF.,Ding, S.,Lu, HB.,Zhou, YL.,...&Chen, ZH.(2004).Structural phase transitions of BaNbxTi(1-x)O(3)(0.0 <= x <= 0.5) thin films.JOURNAL OF APPLIED PHYSICS,96(6),3404.
MLA	Guo, HZ,et al."Structural phase transitions of BaNbxTi(1-x)O(3)(0.0 <= x <= 0.5) thin films".JOURNAL OF APPLIED PHYSICS 96.6(2004):3404.