Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

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	Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
	Zhu, XL ; Guo, LW ; Yu, NS ; Yan, JF ; Peng, MZ ; Zhang, J ; Jia, HQ ; Chen, H ; Zhou, JM
刊名	JOURNAL OF CRYSTAL GROWTH
	2007
卷号	306 期号:2 页码:292
ISSN号	0022-0248
中文摘要	InN films were grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Different buffer layers were used to investigate their effects on structural properties of InN films. These buffers include the nitrided treatment to the sapphire substrate, a low-temperature InN buffer layer and a thick GaN template. Symmetric high resolution X-ray diffraction (HRXRD) omega/2 theta scans and asymmetric (10 (1) over tilde2) Phi scans confirmed all these InN films had a wurtzite-type structure and the in-plane orientation relationship between InN and Al2O3 was uniquely [10 (1) over bar0](InN)parallel to[11 (2) over bar0](Al2O3) The full-width at half maximum (FWHM) of X-ray (0002) rocking curve decreased from 2.44 degrees to 1.09 degrees by inserting a low-temperature InN buffer. The narrowest FWHM of 0.36 degrees for (0 0 0 2) rocking curve was obtained for InN film grown on a thick GaN template, whose large lateral coherence length is about 311 nin. Atomic force microscopy (AFNI) images revealed that InN films without GaN buffer had a root-mean-square (RMS) roughness of 20 nm while that with a GaN template had a RMS roughness of 80 nm. So, both the low-temperature InN buffer and GaN template can improve InN film features from different aspects. It is necessary to combine the two methods to improve the quality of InN film. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53288]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhu, XL,Guo, LW,Yu, NS,et al. Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2007,306(2):292.
APA	Zhu, XL.,Guo, LW.,Yu, NS.,Yan, JF.,Peng, MZ.,...&Zhou, JM.(2007).Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,306(2),292.
MLA	Zhu, XL,et al."Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 306.2(2007):292.