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Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films
Ma, ZX ; Liao, XB ; He, J ; Yue, GZ ; Wang, YQ ; Cheng, WC ; Kong, GL
刊名SOLID STATE COMMUNICATIONS
1997
卷号104期号:10页码:587
关键词POROUS SILICON MATRIX DOTS
ISSN号0038-1098
通讯作者Ma, ZX (reprint author), CHINESE ACAD SCI,INST SEMICOND,CTR CONDENSED MATTER PHYS,STATE LAB SURFACE PHYS,POB 912,BEIJING 100083,PEOPLES R CHINA.
中文摘要The complex conductivity of the spin-density wave (SDW) in (TMTSF)(2)AsF6 was measured between 1 kHz to 10 MHz under various d.c. bias in the temperature range from 1.7 K to 6 K. For the data without d.c. bias, the scaling relation between the a.c. SDW conductivity and the quasi-particle conductivity was demonstrated. For the first measurement of the d.c. bias dependence of the complex conductivity, the real part of the conductivity increased and the imaginary part decreased rapidly above the threshold field of the nonlinear conduction. In addition, an interference structure was observed in the d.c. bias dependence of the dielectric function. This structure became obscure with increasing frequency. We suggest that this behavior can be understood in terms of the crossover from screened SDW response to unscreened SDW response. These observations suggest that the charge dynamics of the SDW in the sliding state are very similar to those of the CDW and can be treated as for a classical deformable charged object. (C) 1997 Published by Elsevier Science Ltd.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/53180]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ma, ZX,Liao, XB,He, J,et al. Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films[J]. SOLID STATE COMMUNICATIONS,1997,104(10):587.
APA Ma, ZX.,Liao, XB.,He, J.,Yue, GZ.,Wang, YQ.,...&Kong, GL.(1997).Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films.SOLID STATE COMMUNICATIONS,104(10),587.
MLA Ma, ZX,et al."Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films".SOLID STATE COMMUNICATIONS 104.10(1997):587.
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