Stoichiometric cBN films deposited by electron-cyclotron-wave-resonance plasma sputtering of hBN | |
Cao, ZX | |
刊名 | DIAMOND AND RELATED MATERIALS |
2000 | |
卷号 | 9期号:11页码:1881 |
关键词 | CUBIC BORON-NITRIDE THIN-FILMS ADHESION |
ISSN号 | 0925-9635 |
通讯作者 | Cao, ZX (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Electron-cyclotron-wave-resonance (ECWR) plasma of pure nitrogen was employed to deposit cBN thin films onto Si(100) substrates by hBN target sputtering. The ion current density and ion energy can be varied fairly independently. Deposition was achieved with ion energies between 70 and 230 eV. The cBN phase was identified with both Fourier transform-infrared spectroscopy (FT-LR) and high-resolution transmission electron microscopy (TEM). Thicker films with nearly 100% cBN phase in the upper layer appeared bright gray or transparent. A maximum thickness of 350 nm for the cBN layer was measured. The film growth follows the aBN --> hBN --> cBN sequence, with nanoarches being located at the hBN-cBN interface. Energy-dispersive X-ray (EDX) analysis verified the perfect stoichiometry of the deposits. Depending on the processing parameters the films displayed varied morphology. In particular, the surface of the film deposited at 74 eV exhibited large islands with diffuse boundaries on a compact base plane, suggesting the reduction of compressive stress at low ion energy. (C) 2000 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/53092] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Cao, ZX. Stoichiometric cBN films deposited by electron-cyclotron-wave-resonance plasma sputtering of hBN[J]. DIAMOND AND RELATED MATERIALS,2000,9(11):1881. |
APA | Cao, ZX.(2000).Stoichiometric cBN films deposited by electron-cyclotron-wave-resonance plasma sputtering of hBN.DIAMOND AND RELATED MATERIALS,9(11),1881. |
MLA | Cao, ZX."Stoichiometric cBN films deposited by electron-cyclotron-wave-resonance plasma sputtering of hBN".DIAMOND AND RELATED MATERIALS 9.11(2000):1881. |
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