Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m | |
Li, C ; Yang, QQ ; Wang, HJ ; Zhu, J ; Luo, LP ; Yu, JZ ; Wang, QM ; Li, YK ; Zhou, JM ; Lin, CL | |
刊名 | APPLIED PHYSICS LETTERS
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2000 | |
卷号 | 77期号:2页码:157 |
关键词 | HIGH-SPEED PHOTODIODE |
ISSN号 | 0003-6951 |
通讯作者 | Li, C (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
中文摘要 | We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8]. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/52533] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, C,Yang, QQ,Wang, HJ,et al. Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m[J]. APPLIED PHYSICS LETTERS,2000,77(2):157. |
APA | Li, C.,Yang, QQ.,Wang, HJ.,Zhu, J.,Luo, LP.,...&Lin, CL.(2000).Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m.APPLIED PHYSICS LETTERS,77(2),157. |
MLA | Li, C,et al."Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m".APPLIED PHYSICS LETTERS 77.2(2000):157. |
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