Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN | |
Wang, L ; Hu, Y ; Li, Z ; Tang, JC ; Wang, XS | |
刊名 | NANOTECHNOLOGY
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2002 | |
卷号 | 13期号:6页码:714 |
关键词 | TRANSMISSION ELECTRON-MICROSCOPY MOLECULAR-BEAM EPITAXY SILICON CLUSTERS OPTICAL-PROPERTIES NANOCRYSTALS NANOSTRUCTURES NANOPARTICLES NANOCLUSTERS ASSEMBLIES FILMS |
ISSN号 | 0957-4484 |
通讯作者 | Wang, XS (reprint author), Zhejiang Univ, Hangzhou 310027, Peoples R China. |
中文摘要 | The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape. surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches similar to40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among a themselves determine the overlayer texture as the amount of material deposition increases. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/52501] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, L,Hu, Y,Li, Z,et al. Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN[J]. NANOTECHNOLOGY,2002,13(6):714. |
APA | Wang, L,Hu, Y,Li, Z,Tang, JC,&Wang, XS.(2002).Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN.NANOTECHNOLOGY,13(6),714. |
MLA | Wang, L,et al."Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN".NANOTECHNOLOGY 13.6(2002):714. |
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