Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN

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	Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN
	Wang, L ; Hu, Y ; Li, Z ; Tang, JC ; Wang, XS
刊名	NANOTECHNOLOGY
	2002
卷号	13 期号:6 页码:714
关键词	TRANSMISSION ELECTRON-MICROSCOPY MOLECULAR-BEAM EPITAXY SILICON CLUSTERS OPTICAL-PROPERTIES NANOCRYSTALS NANOSTRUCTURES NANOPARTICLES NANOCLUSTERS ASSEMBLIES FILMS
ISSN号	0957-4484
通讯作者	Wang, XS (reprint author), Zhejiang Univ, Hangzhou 310027, Peoples R China.
中文摘要	The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape. surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches similar to40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among a themselves determine the overlayer texture as the amount of material deposition increases.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52501]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, L,Hu, Y,Li, Z,et al. Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN[J]. NANOTECHNOLOGY,2002,13(6):714.
APA	Wang, L,Hu, Y,Li, Z,Tang, JC,&Wang, XS.(2002).Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN.NANOTECHNOLOGY,13(6),714.
MLA	Wang, L,et al."Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN".NANOTECHNOLOGY 13.6(2002):714.