Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

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	Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth
	Bakhtizin, RZ ; Xue, QZ ; Xue, QK ; Wu, KH ; Sakurai, T
刊名	PHYSICS-USPEKHI
	2004
卷号	47 期号:4 页码:371
关键词	MOLECULAR-BEAM EPITAXY ENERGY ELECTRON-DIFFRACTION COVERED GAN(0001) SURFACES LIGHT-EMITTING DIODES CUBIC GAN ATOMIC-STRUCTURE GAN(000(1)OVER-BAR) SURFACE LATTICE POLARITY SINGLE-CRYSTALS SILICON-CARBIDE
ISSN号	1063-7869
通讯作者	Bakhtizin, RZ (reprint author), Bashkir State Univ, Dept Phys Elect, Ufa 450074, Russia.
中文摘要	The electrical resistivity of Zr48Nb8Cu12Fe8Be24 bulk metallic glassy and crystallized alloys in the temperature range of 4.2-293 K is investigated. It is found that the resistivity in glassy and crystallized states shows opposite temperature coefficients. For the metallic glass, the resistivity shows a negative logarithmic dependence at temperatures below 16 K, whereas it has more normal behavior for the crystallized alloy. At higher temperatures, the resistivity in both glassy and crystallized alloys shows dependence upon both T and T-2, but the signs of the T and T-2 terms are opposite. The results are interpreted in terms of scattering from two-level tunneling states in glasses and the generalized Ziman diffraction model. (C) 2004 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52333]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Bakhtizin, RZ,Xue, QZ,Xue, QK,et al. Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth[J]. PHYSICS-USPEKHI,2004,47(4):371.
APA	Bakhtizin, RZ,Xue, QZ,Xue, QK,Wu, KH,&Sakurai, T.(2004).Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth.PHYSICS-USPEKHI,47(4),371.
MLA	Bakhtizin, RZ,et al."Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth".PHYSICS-USPEKHI 47.4(2004):371.