Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe

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	Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe
	Wang, YL ; Jiang, YP ; Chen, M ; Li, Z ; Song, CL ; Wang, LL ; He, K ; Chen, X ; Ma, XC ; Xue, QK
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	2012
卷号	24 期号:47
关键词	DER-WAALS EPITAXY VANDERWAALS EPITAXY MOIRE PATTERN NOBEL LECTURE THIN-FILMS GRAPHENE GROWTH IMAGES SUPERCONDUCTIVITY SURFACE
ISSN号	0953-8984
通讯作者	Wang, YL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China.
中文摘要	We investigate the heteroepitaxial growth of Bi2Se3 films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi2Se3 on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moire pattern originating from the lattice mismatch between Bi2Se3 and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi2Se3 thin films, which can be ascribed to the charge transfer at the interface.
收录类别	SCI
资助信息	National Natural Science Foundation of China; Ministry of Science and Technology of China; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52332]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, YL,Jiang, YP,Chen, M,et al. Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(47).
APA	Wang, YL.,Jiang, YP.,Chen, M.,Li, Z.,Song, CL.,...&Xue, QK.(2012).Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.JOURNAL OF PHYSICS-CONDENSED MATTER,24(47).
MLA	Wang, YL,et al."Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe".JOURNAL OF PHYSICS-CONDENSED MATTER 24.47(2012).