Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

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	Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
	Hu, CC ; Ye, HQ ; Wang, G ; Tian, HT ; Wang, WX ; Wang, WQ ; Liu, BL ; Marie, X
刊名	NANOSCALE RESEARCH LETTERS
	2011
卷号	6
关键词	COULOMB DRAG TRANSPORT SEMICONDUCTORS GRATINGS
ISSN号	1931-7573
通讯作者	Liu, BL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 mu m at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D(s).
收录类别	SCI
资助信息	National Science Foundation of China [10534030, 10774183, 10911130356, 10874212]; Ministry of Finance; National Basic Research Program of China [2006CB921300, 2009CB930500]; ANR
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52250]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hu, CC,Ye, HQ,Wang, G,et al. Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells[J]. NANOSCALE RESEARCH LETTERS,2011,6.
APA	Hu, CC.,Ye, HQ.,Wang, G.,Tian, HT.,Wang, WX.,...&Marie, X.(2011).Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells.NANOSCALE RESEARCH LETTERS,6.
MLA	Hu, CC,et al."Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells".NANOSCALE RESEARCH LETTERS 6(2011).