Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs

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	Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs
	Li, J ; Chen, L ; Chen, P ; Ong, CK
刊名	SUPERCONDUCTOR SCIENCE & TECHNOLOGY
	2002
卷号	15 期号:2 页码:226
关键词	JOSEPHSON-JUNCTIONS
ISSN号	0953-2048
通讯作者	Li, J (reprint author), Natl Univ Singapore, Ctr Superconducting & Magnet Mat, Lower Kent Ridge Rd, Singapore 119260, Singapore.
中文摘要	Quantized voltage across the unbiased terminals of a bicrystal YBa2Cu3O7 dc SQUID exposed to microwave radiation has been observed at 77 K. Using this voltage as an indication of the microwave power coupled to the junctions, we identified three distinct regions in the I-V curves as the microwave power was tuned, similar to those reported for low-T-c SQUID. Pronounced double period steps were observed when the microwave radiation power was high enough to suppress the dc Josephson current completely. Half-integer steps also appeared as the applied dc-magnetic flux was close to half-integers of flux quanta. The experimental phenomenon was explained based on the resistively shunted Josephson junction model.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52186]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, J,Chen, L,Chen, P,et al. Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2002,15(2):226.
APA	Li, J,Chen, L,Chen, P,&Ong, CK.(2002).Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,15(2),226.
MLA	Li, J,et al."Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 15.2(2002):226.