Resonant tunneling through quantum dots in GaAs Schottky diode structures

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	Resonant tunneling through quantum dots in GaAs Schottky diode structures
	Li, HW ; Wang, TH
刊名	PHYSICS OF LOW-DIMENSIONAL STRUCTURES
	2000
卷号	9-10 页码:119
关键词	ELECTRON-EMISSION MICROSCOPY SPECTROSCOPY STATES BAND
ISSN号	0204-3467
通讯作者	Li, HW (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	We fabricated GaAs metal-semiconductor Schottky diodes containing InAs self-assembled quantum dots. Current transport characteristics were measured at 77 K. Current peaks and negative differential resistance had been observed under reverse bias in some diodes. The second derivatives of the current of all diodes show clear dips. All these structures were interpreted as being due to the resonant tunneling through the zero-dimensional energy states of InAs quantum dots. Three bound states can be clearly observed for most of the diodes. The energy gaps between the bound states of quantum dots were roughly estimated from the dips to be about 50-80 meV.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52137]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, HW,Wang, TH. Resonant tunneling through quantum dots in GaAs Schottky diode structures[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES,2000,9-10:119.
APA	Li, HW,&Wang, TH.(2000).Resonant tunneling through quantum dots in GaAs Schottky diode structures.PHYSICS OF LOW-DIMENSIONAL STRUCTURES,9-10,119.
MLA	Li, HW,et al."Resonant tunneling through quantum dots in GaAs Schottky diode structures".PHYSICS OF LOW-DIMENSIONAL STRUCTURES 9-10(2000):119.