Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures

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	Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures
	Li, HW ; Wang, TH
刊名	PHYSICA B
	2001
卷号	304 期号:1-4 页码:107
关键词	SPECTROSCOPY ELECTRONS
ISSN号	0921-4526
通讯作者	Li, HW (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Direct electronic transport properties in a GaAs metal-semiconductor diode structure containing InAs self-assembled quantum dots are reported. Current peaks and negative differential resistance due to resonant tunneling through the zero-dimensional states of the InAs dots are clearly observed under reverse biases. The second derivative of the current versus voltage shows more structures at larger voltages, which are attributed to the resonant tunneling through the excited states of the quantum dots. From the peak positions in the second derivative, the energy separations between the states of the quantum dots are roughly estimated according to a simple calculation based on our experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52136]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, HW,Wang, TH. Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures[J]. PHYSICA B,2001,304(1-4):107.
APA	Li, HW,&Wang, TH.(2001).Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures.PHYSICA B,304(1-4),107.
MLA	Li, HW,et al."Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures".PHYSICA B 304.1-4(2001):107.