Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

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	Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure
	Tian, HF ; Zhao, YG ; Jiang, XL ; Shi, JP ; Zhang, HJ ; Sun, JR
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2011
卷号	102 期号:4 页码:939
关键词	THIN-FILMS LEAKAGE CURRENT RELAXATION
ISSN号	0947-8396
通讯作者	Zhao, YG (reprint author), Tsinghua Univ, Dept Phys, Minist Educ, Beijing 100084, Peoples R China.
中文摘要	The authors report on the fabrication and electronic transport property of LaAlO3/Nb-doped SrTiO3 heterostructure. The current-voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 10(4). More interestingly, the relaxation of junction current after switching follows the Curie-von Schweidler law Jaet (-n) with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.
收录类别	SCI
资助信息	National Science Foundation of China [50872065, 10721404]; Specialized Research for the Doctoral Program of Higher Education
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52100]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tian, HF,Zhao, YG,Jiang, XL,et al. Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,102(4):939.
APA	Tian, HF,Zhao, YG,Jiang, XL,Shi, JP,Zhang, HJ,&Sun, JR.(2011).Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,102(4),939.
MLA	Tian, HF,et al."Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 102.4(2011):939.