Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials

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	Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials
	Guo, LW ; Han, YJ ; Hu, CY ; Tan, PH ; Yang, FH ; Huang, Q ; Zhou, JM
刊名	PHYSICAL REVIEW B
	2002
卷号	65 期号:12
关键词	MOLECULAR-BEAM EPITAXY ALXGA1-XAS ALLOYS GAAS PHOTOLUMINESCENCE
ISSN号	1098-0121
通讯作者	Guo, LW (reprint author), Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	We report on the observation of resonant Raman scattering in low-temperature-grown AlGaAs/GaAs structure. Two kinds of excitation lights, 632.8 and 488 nm laser lines, were used to detect scattering signal from different regions based on different penetration depths. Under the outgoing resonant condition, up to fourth-order resonant Raman peaks were observed in the low-temperature-grown AlGaAs alloy, owing to a broad exciton luminescence in low-temperature-grown AlGaAs alloy induced by intrinsic defects and As cluster after post-annealing. These resonant peaks were assigned according to their fundamental modes. Among the resonant peaks, besides the overtones of the GaAs- or AlAs-like mode, there exist combination bands of these two kinds of modes. In addition, a weak scattering peak similar to the bulk GaAs longitudinal optical mode was observed in low-temperature Raman experiments. We consider the weak signal correlated with GaAs clusters appearing in AlGaAs alloys. The accumulation of GaAs in AlGaAs alloys was enhanced after annealing at high temperatures. A detailed study of the dependence of vibration modes on measuring temperature and post-annealing conditions is given also. In light of our experiments, it is suggested that a Raman scattering experiment is a sensitive microscopic probe of local disorder and, especially performed at low temperature, is a superior method in detecting and analyzing the weak interaction between phonons and electrons.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51850]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Guo, LW,Han, YJ,Hu, CY,et al. Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials[J]. PHYSICAL REVIEW B,2002,65(12).
APA	Guo, LW.,Han, YJ.,Hu, CY.,Tan, PH.,Yang, FH.,...&Zhou, JM.(2002).Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials.PHYSICAL REVIEW B,65(12).
MLA	Guo, LW,et al."Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials".PHYSICAL REVIEW B 65.12(2002).