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Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions
Lu, HB ; Jin, KJ ; Huang, YH ; He, M ; Zhao, K ; Cheng, BL ; Chen, ZH ; Zhou, YL ; Dai, SY ; Yang, GZ
刊名APPLIED PHYSICS LETTERS
2005
卷号86期号:24
关键词MOLECULAR-BEAM EPITAXY THIN-FILMS SRTIO3 SILICON
ISSN号0003-6951
通讯作者Lu, HB (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Structure and magnetic properties of (Nd1-xYx)(3)Fe29-yCry compounds with x = 0-1.0 and y = 4-1.5 have been investigated. It is found that in an adequate annealing temperature range all the investigated compounds crystallize in the Nd-3(Fe,Ti)(29)-type structure. However when the annealing temperature is below 1323 K, the Y3Fe27.5Cr1.5 compound crystallizes in a disordered CaCu5-type structure. Substitution of Y for Nd leads to a reduction of the lattice parameters. The Curie temperature T-c shows no clear change as the Y and Cr contents change in the above-mentioned concentration region. With increasing Y content, the easy magnetization direction changes from close to the [0 4 0] direction to the [40-2] direction. The X-ray-diffraction patterns and the AC susceptibility of the (Nd1-xYx)(3)Fe29-yCry samples reveal a spin reorientation phenomenon for x = 0-0.4 as the temperature decreases from room temperature to 77 K. The spin reorientation temperature T-sr increases monotonically with increasing Y content from 158 K for x = 0 to 201 K for x = 0.4. (c) 2005 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/51026]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lu, HB,Jin, KJ,Huang, YH,et al. Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions[J]. APPLIED PHYSICS LETTERS,2005,86(24).
APA Lu, HB.,Jin, KJ.,Huang, YH.,He, M.,Zhao, K.,...&Yang, GZ.(2005).Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions.APPLIED PHYSICS LETTERS,86(24).
MLA Lu, HB,et al."Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions".APPLIED PHYSICS LETTERS 86.24(2005).
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