Photoluminescence from InAs quantum dots on GaAs(100)

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Photoluminescence from InAs quantum dots on GaAs(100)
	Cheng, WQ ; Xie, XG ; Zhong, ZY ; Cai, LH ; Huang, Q ; Zhou, JM
刊名	THIN SOLID FILMS
	1998
卷号	312 期号:1-2 页码:287
关键词	TEMPERATURE
ISSN号	0040-6090
通讯作者	Cheng, WQ (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Several samples of self-organized InAs quantum dots (QDs) with different InAs deposition and an InGaAs quantum well on GaAs(100) were grown by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of QDs was measured in the temperature range from 79 K to room temperature. The temperature dependence of the PL peak energy is roughly the same as that of InGaAs quantum wells and attributed to the temperature dependence of the band gap. The ratio of PL peak intensity from QDs to that from wetting layer increases with the increase of InAs deposition. It is attributed to the increase in QDs density and more photocarriers transfer from wetting layer to QD. In the case of small InAs deposition, the PL intensity from QDs increases with temperature increase in a certain temperature range. It is also due to the carrier transfer from wetting layer to QDs. The full width at half maximum (FWHM) of the QDs decreases with temperature in a certain temperature range. This is attributed to the photocarrier transfer from small QDs to large ones by tunneling. (C) 1998 Elsevier Science S.A.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50945]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Cheng, WQ,Xie, XG,Zhong, ZY,et al. Photoluminescence from InAs quantum dots on GaAs(100)[J]. THIN SOLID FILMS,1998,312(1-2):287.
APA	Cheng, WQ,Xie, XG,Zhong, ZY,Cai, LH,Huang, Q,&Zhou, JM.(1998).Photoluminescence from InAs quantum dots on GaAs(100).THIN SOLID FILMS,312(1-2),287.
MLA	Cheng, WQ,et al."Photoluminescence from InAs quantum dots on GaAs(100)".THIN SOLID FILMS 312.1-2(1998):287.