Photocurrent characteristics of individual ZnGa2O4 nanowires

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	Photocurrent characteristics of individual ZnGa2O4 nanowires
	Feng, P ; Zhang, JY ; Wan, Q ; Wang, TH
刊名	JOURNAL OF APPLIED PHYSICS
	2007
卷号	102 期号:7
ISSN号	0021-8979
中文摘要	ZnGa2O4 nanowires were grown via a low-pressure chemical vapor deposition method, and the electrical transport properties of these nanowires were investigated. It was found that the current across individual nanowires was several picoamperes at a bias of 30 V, and the current was insensitive to oxygen and temperature. These behaviors still maintained as the ZnGa2O4 nanowires were exposed to below-band-gap irradiation. In contrast, upon exposure to 254 nm ultraviolet light, the current across the nanowire increased a lot. With decreasing oxygen pressure or increasing temperature, the photocurrent increased evidently; this could be understood from the Langmuir model and the adsorption isobar, respectively. The present results demonstrate that surface-related processes especially oxygen chemisorption have significant effects on the photoelectric properties of nanostructures. The optically driven oxygen and temperature sensing as found in the ZnGa2O4 nanowires may find promising applications in functional devices. (C) 2007 American Institute of Physics.
收录类别	SCI
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50905]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Feng, P,Zhang, JY,Wan, Q,et al. Photocurrent characteristics of individual ZnGa2O4 nanowires[J]. JOURNAL OF APPLIED PHYSICS,2007,102(7).
APA	Feng, P,Zhang, JY,Wan, Q,&Wang, TH.(2007).Photocurrent characteristics of individual ZnGa2O4 nanowires.JOURNAL OF APPLIED PHYSICS,102(7).
MLA	Feng, P,et al."Photocurrent characteristics of individual ZnGa2O4 nanowires".JOURNAL OF APPLIED PHYSICS 102.7(2007).