PEDOT:PSS Schottky contacts on annealed ZnO films

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	PEDOT:PSS Schottky contacts on annealed ZnO films
	Zhu, YB ; Hu, W ; Na, J ; He, F ; Zhou, YL ; Chen, C
刊名	CHINESE PHYSICS B
	2011
卷号	20 期号:4
关键词	N-GAN ALGAN/GAN INSERTION DIODE
ISSN号	1674-1056
通讯作者	Zhu, YB (reprint author), Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China.
中文摘要	Polycrystalline ZnO and ITO films on SiO(2) substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n = 1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 degrees C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO(2). The results are useful for applications such as metal semiconductor field-effect transistors and UV photodetectors.
收录类别	SCI
资助信息	Fundamental Research Funds for the Central Universities of China [2009JBM098]
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50645]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhu, YB,Hu, W,Na, J,et al. PEDOT:PSS Schottky contacts on annealed ZnO films[J]. CHINESE PHYSICS B,2011,20(4).
APA	Zhu, YB,Hu, W,Na, J,He, F,Zhou, YL,&Chen, C.(2011).PEDOT:PSS Schottky contacts on annealed ZnO films.CHINESE PHYSICS B,20(4).
MLA	Zhu, YB,et al."PEDOT:PSS Schottky contacts on annealed ZnO films".CHINESE PHYSICS B 20.4(2011).