Oxide thin films for tunable microwave devices

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	Oxide thin films for tunable microwave devices
	Xi, XX ; Li, HC ; Si, WD ; Sirenko, AA ; Akimov, IA ; Fox, JR ; Clark, AM ; Hao, JH
刊名	JOURNAL OF ELECTROCERAMICS
	2000
卷号	4 期号:2-3 页码:393
关键词	EPITAXIAL LIFT-OFF DIELECTRIC LOSS RAMAN-SCATTERING OXYGEN-VACANCY SRTIO3 TEMPERATURE FERRITE SR1-XCAXTIO3 PEROVSKITES PERFORMANCE
ISSN号	1385-3449
通讯作者	Xi, XX (reprint author), Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA.
中文摘要	Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50535]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xi, XX,Li, HC,Si, WD,et al. Oxide thin films for tunable microwave devices[J]. JOURNAL OF ELECTROCERAMICS,2000,4(2-3):393.
APA	Xi, XX.,Li, HC.,Si, WD.,Sirenko, AA.,Akimov, IA.,...&Hao, JH.(2000).Oxide thin films for tunable microwave devices.JOURNAL OF ELECTROCERAMICS,4(2-3),393.
MLA	Xi, XX,et al."Oxide thin films for tunable microwave devices".JOURNAL OF ELECTROCERAMICS 4.2-3(2000):393.