Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy

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	Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy
	Wu, SD ; Wang, WX ; Guo, LW ; Li, ZH ; Shang, XZ ; Liu, F ; Huang, Q ; Zhou, JM
刊名	JOURNAL OF CRYSTAL GROWTH
	2005
卷号	278 期号:1-4 页码:548
关键词	VAPOR-PHASE EPITAXY INTERFACE ROUGHNESS ALGAAS PHOTOLUMINESCENCE HETEROSTRUCTURES QUALITY DIODES MBE SB
ISSN号	0022-0248
通讯作者	Zhou, JM (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	The influence of antimony (Sb) incorporation on the optical properties of AlAs/GaAs quantum wells (QWs) grown by solid source molecular beam epitaxy (SSMBE) has been investigated by room- and low-temperature photoluminescence (PL) measurements. Various Sb fluxes are used in an growing AlAs barrier layer. The room- and low-temperature PL measurements showed that incorporation of a very small amount of Sb doping can decrease the PL linewidths and increase the PL intensity of AlAs/GaAs QWs drastically, which indicates that Sb improves the interface and crystal quality as both a surfactant and an isoelectronic dopant in AlAs. However, the PL intensity reduces, and full-width at half-maximum (FWHM) of QWs increases with the increase of Sb flux, indicating that a little high concentration of Sb incorporated into the alloy and degrades the interfacial and crystalline quality. It is attributed to the strain-induced defects in the barrier layers of AlAs. Moreover, we also use the infinite square potential well model to study the relation of the interface roughness and FWHM. © 2005 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50324]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wu, SD,Wang, WX,Guo, LW,et al. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2005,278(1-4):548.
APA	Wu, SD.,Wang, WX.,Guo, LW.,Li, ZH.,Shang, XZ.,...&Zhou, JM.(2005).Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,278(1-4),548.
MLA	Wu, SD,et al."Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 278.1-4(2005):548.