Numerical simulation of nc-Si : H/c-Si heterojunction solar cells

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	Numerical simulation of nc-Si : H/c-Si heterojunction solar cells
	Hu, ZH ; Liao, XB ; Zeng, XB ; Xu, YY ; Zhang, SB ; Diao, HW ; Kong, GL
刊名	ACTA PHYSICA SINICA
	2003
卷号	52 期号:1 页码:217
关键词	SILICON HETEROJUNCTION LAYER
ISSN号	1000-3290
通讯作者	Hu, ZH (reprint author), Chinese Acad Sci, State Lab Surface Phys, Inst Semiconductor, Beijing 100083, Peoples R China.
中文摘要	AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V-OC) and fill factors (FF) of these structured solar cells. Short circuit current density (J(SC)) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n(+)-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As DeltaE(C) increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 31.17% (AM1.5,100mW/cm(2), 0.40-1.1mum) has been obtained with BSF structure, idealized light-trapping effect(R-F=0, R-B=1) and no interface states.
收录类别	SCI
语种	中文
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50093]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hu, ZH,Liao, XB,Zeng, XB,et al. Numerical simulation of nc-Si : H/c-Si heterojunction solar cells[J]. ACTA PHYSICA SINICA,2003,52(1):217.
APA	Hu, ZH.,Liao, XB.,Zeng, XB.,Xu, YY.,Zhang, SB.,...&Kong, GL.(2003).Numerical simulation of nc-Si : H/c-Si heterojunction solar cells.ACTA PHYSICA SINICA,52(1),217.
MLA	Hu, ZH,et al."Numerical simulation of nc-Si : H/c-Si heterojunction solar cells".ACTA PHYSICA SINICA 52.1(2003):217.