Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures | |
Ge, C ; Jin, KJ ; Wang, C ; Lu, HB ; Wang, C ; Yang, GZ | |
刊名 | APPLIED PHYSICS LETTERS
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2011 | |
卷号 | 99期号:6 |
关键词 | BIFEO3 FILMS |
ISSN号 | 0003-6951 |
通讯作者 | Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | A self-consistent numerical model, particularly including the incomplete screening effect of metal electrodes, is introduced to reveal the mechanism of the switchable diode characteristics in metal/ferroelectric/ metal structures. The calculated results are in good agreement with recent experimental data, theoretically demonstrating the important role played by the polarization-modulated barrier. Our calculations confirm that electrodes with a smaller permittivity, such as noble metals, are better choices to obtain a more pronounced switchable diode effect, and the barrier height variation as a function of the polarization will deviate from the linear relationship if the carrier concentration induced by the polarization becomes sufficiently high. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624849] |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China; National Basic Research Program of China |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50081] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Ge, C,Jin, KJ,Wang, C,et al. Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures[J]. APPLIED PHYSICS LETTERS,2011,99(6). |
APA | Ge, C,Jin, KJ,Wang, C,Lu, HB,Wang, C,&Yang, GZ.(2011).Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures.APPLIED PHYSICS LETTERS,99(6). |
MLA | Ge, C,et al."Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures".APPLIED PHYSICS LETTERS 99.6(2011). |
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