Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system | |
Fei, YJ ; Wang, X ; Wang, XJ ; Zhou, YQ ; Xiong, YY ; Feng, KA | |
刊名 | CHINESE PHYSICS
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2002 | |
卷号 | 11期号:3页码:298 |
关键词 | CARBON CLUSTERS SURFACES FILMS |
ISSN号 | 1009-1963 |
通讯作者 | Fei, YJ (reprint author), Chinese Acad Sci, Inst Phys, Condensed Phys Ctr, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth Using C-60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C-60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C-60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50068] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Fei, YJ,Wang, X,Wang, XJ,et al. Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system[J]. CHINESE PHYSICS,2002,11(3):298. |
APA | Fei, YJ,Wang, X,Wang, XJ,Zhou, YQ,Xiong, YY,&Feng, KA.(2002).Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system.CHINESE PHYSICS,11(3),298. |
MLA | Fei, YJ,et al."Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system".CHINESE PHYSICS 11.3(2002):298. |
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