Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system

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	Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system
	Fei, YJ ; Wang, X ; Wang, XJ ; Zhou, YQ ; Xiong, YY ; Feng, KA
刊名	CHINESE PHYSICS
	2002
卷号	11 期号:3 页码:298
关键词	CARBON CLUSTERS SURFACES FILMS
ISSN号	1009-1963
通讯作者	Fei, YJ (reprint author), Chinese Acad Sci, Inst Phys, Condensed Phys Ctr, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth Using C-60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C-60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C-60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50068]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Fei, YJ,Wang, X,Wang, XJ,et al. Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system[J]. CHINESE PHYSICS,2002,11(3):298.
APA	Fei, YJ,Wang, X,Wang, XJ,Zhou, YQ,Xiong, YY,&Feng, KA.(2002).Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system.CHINESE PHYSICS,11(3),298.
MLA	Fei, YJ,et al."Nucleation of diamond on silicon wafers using C-60 in the hot filament chemical vapour deposition system".CHINESE PHYSICS 11.3(2002):298.