Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

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	Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices
	Cao, MG ; Chen, YS ; Sun, JR ; Shang, DS ; Liu, LF ; Kang, JF ; Shen, BG
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101 期号:20
关键词	RESET MECHANISM MEMORY RESISTANCE FILMS RRAM
ISSN号	0003-6951
通讯作者	Cao, MG (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Dynamic processes of resistance switching have been systemically investigated for the Ti/HfO2/Pt bipolar devices. Different transient characteristics were observed in the set and reset processes. The set process consisted of a waiting step and a following abrupt transition, whereas the reset process demonstrated a gradual resistance change. Nonlinear dependence of set time on pulse voltage was observed and explained by the thermally accelerated dielectric breakdown of local switching regions. The accumulation and dissipation effects observed for different pulse treatments strongly supported the proposed model, which suggests a possible approach to overcome the voltage-time dilemma. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766737]
收录类别	SCI
资助信息	National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Natural Science Foundation
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/49961]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Cao, MG,Chen, YS,Sun, JR,et al. Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices[J]. APPLIED PHYSICS LETTERS,2012,101(20).
APA	Cao, MG.,Chen, YS.,Sun, JR.,Shang, DS.,Liu, LF.,...&Shen, BG.(2012).Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices.APPLIED PHYSICS LETTERS,101(20).
MLA	Cao, MG,et al."Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices".APPLIED PHYSICS LETTERS 101.20(2012).