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Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures
Luo, Q ; Wang, Q ; Gu, CZ
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
2009
卷号9期号:2页码:1548
关键词NANOWIRES SYSTEM NISI
ISSN号1533-4880
通讯作者Gu, CZ (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China.
中文摘要An approach was proposed for fabricating nickel silicide nanostructures by self-aligned transformation from site-specific silicon nanostructures on the silicon-on-insulator substrate. The silicon nanostructures were firstly fabricated through the sequence of electron beam lithography and pattern transfer to silicon with reactive ion etching. The line-width of structures was shrunk by focused ion beam milling technology. Then nickel silicide nanostructures with the line-width of less than 50 nm were obtained on the insulator separation layer by sequential processes of nickel film deposition, rapid thermal annealing and wet-chemical etching. It was shown that 550 degrees C was an optimal annealing temperature to form NiSi nanostructures with low resistivity of about 15 mu Omega.cm. As-formed metallic NiSi nanowire showed stable electrical properties at elevated temperature.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/49895]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Luo, Q,Wang, Q,Gu, CZ. Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2009,9(2):1548.
APA Luo, Q,Wang, Q,&Gu, CZ.(2009).Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,9(2),1548.
MLA Luo, Q,et al."Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 9.2(2009):1548.
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