Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si

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	Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si
	Liu, BT ; Cheng, CS ; Li, F ; Ma, L ; Zhao, QX ; Yan, Z ; Wu, DQ ; Li, CR ; Wang, Y ; Li, XH ; Zhang, XY
刊名	APPLIED PHYSICS LETTERS
	2006
卷号	88 期号:25
关键词	TI-AL HETEROSTRUCTURES POLARIZATION PB(ZR RESISTANCE MEMORIES SILICON GROWTH TI)O-3
ISSN号	0003-6951
通讯作者	Liu, BT (reprint author), Hebei Univ, Coll Phys Sci & Technol, Hebei 071002, Peoples R China.
中文摘要	We report on the use of amorphous Ni-Al film (a-Ni-Al) as conductive diffusion barrier layer to integrate La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without any discernible interdiffusion/reaction in the sample. The physical properties of the capacitors are vertically characterized as the parameters of memory elements. Excellent ferroelectric properties, e.g., large remnant polarization of similar to 22 mu C/cm(2), small coercive voltage of similar to 1.15 V, being fatigue-free, good retention characteristic, imply that amorphous Ni-Al is an ideal candidate for diffusion barrier for the high-density ferroelectric random access memories integrated with silicon transistor technology. (c) 2006 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/49892]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, BT,Cheng, CS,Li, F,et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si[J]. APPLIED PHYSICS LETTERS,2006,88(25).
APA	Liu, BT.,Cheng, CS.,Li, F.,Ma, L.,Zhao, QX.,...&Zhang, XY.(2006).Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si.APPLIED PHYSICS LETTERS,88(25).
MLA	Liu, BT,et al."Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si".APPLIED PHYSICS LETTERS 88.25(2006).