Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric | |
Fu, WY ; Xu, Z ; Liu, KH ; Wang, WL ; Bai, XD ; Wang, EG | |
刊名 | APPLIED PHYSICS LETTERS |
2008 | |
卷号 | 93期号:21 |
关键词 | FLEXIBLE ELECTRONICS HETEROSTRUCTURES TRANSPARENT FABRICATION |
ISSN号 | 0003-6951 |
通讯作者 | Bai, XD (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | In this letter, amorphous Bi(1.5)Zn(1.0)Nb(1.5)O(7) films with large permittivity (similar to 70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature (similar to 100 degrees C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (< 3 V), a high carrier mobility (similar to 42 cm(2)/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric is a promising candidate for high-performance flexible electronics. |
收录类别 | SCI |
资助信息 | NSF [50725209, 60621091, 10874218]; MOST [2007CB936203, 2007AA03Z353]; CAS of China |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/49703] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Fu, WY,Xu, Z,Liu, KH,et al. Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric[J]. APPLIED PHYSICS LETTERS,2008,93(21). |
APA | Fu, WY,Xu, Z,Liu, KH,Wang, WL,Bai, XD,&Wang, EG.(2008).Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric.APPLIED PHYSICS LETTERS,93(21). |
MLA | Fu, WY,et al."Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric".APPLIED PHYSICS LETTERS 93.21(2008). |
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