Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)

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	Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)
	Xie, FQ ; Chen, YC ; Zhang, QZ ; Lin, ZD
刊名	WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE
	1998
卷号	512 页码:233
ISSN号	0272-9172
通讯作者	Xie, FQ (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China.
中文摘要	The thermal behavior of CHx(x=2-3) radicals and H atoms adsorbed on Si(111) surface was investigated using high-resolution electron-energy-loss spectroscopy (HREELS), quadrupole mass spectrometry (QMS), and low-energy electron diffraction (LEED). We found that CH,(x=2-3) radicals in the top adlayers of saturate adsorption were not stable, and the loose structures among a few top adlayers broke up completely till 550K. TDMS(thermal desorption mass spectrometry) analysis showed significant desorption of atomic hydrogen, CH2 and CH3. In the region of 550K-750K, only H-2 was detected by TDMS, and we speculate that the CH,(x=2-3) species catenate each other, and form a network of hydrocarbon, which is possibly the initial stage of diamond nucleation on Si. This formed network was not stable above 800K, C-2 hydrocarbon species were observed after the thermal desorption temperature was over 800K. HREELS measurement demonstrated that no H atoms existed when substrate temperature reached 980K. Compared with the result reported by S.-Tong Lee for diamond(Ref.12), we conclude that low stability of hydrocarbon species on Si is the dominant reason that results in the difficulty of diamond nucleation an perfect Si surface.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/49619]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xie, FQ,Chen, YC,Zhang, QZ,et al. Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)[J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE,1998,512:233.
APA	Xie, FQ,Chen, YC,Zhang, QZ,&Lin, ZD.(1998).Reaction processes at the initial stage of diamond nucleation on the surface of Si(111).WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE,512,233.
MLA	Xie, FQ,et al."Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)".WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE 512(1998):233.