ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes | |
Young, SJ ; Ji, LW ; Chang, SJ ; Chen, YP ; Lam, KT ; Liang, SH ; Du, XL ; Xue, QK ; Sun, YS | |
刊名 | IET OPTOELECTRONICS
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2007 | |
卷号 | 1期号:3页码:135 |
ISSN号 | 1751-8768 |
中文摘要 | Oscillating voltage (V-Os), which depends on the frequency dependence of the magnetoimpedance (MI) effect, was applied to study a magnetic tunneling junction (MTJ) of Ru(5 mn)/Cu(10 nm)/Ru(5 nm)/IrMn(10 nm)/CoFeB(4 nm)/Al-2 O-3/CoFeB(4 nm)/Ru(5 nm) at frequencies up to 40 MHz. The MI ratio decreased as the V-Os. was increased. The MI ratio turned from positive to negative at a certain frequency. An equivalent circuit model was employed to analyze the results. The fact that MTJ can be regarded as the composition of a resistance component and two sets of parallel resistance (R) and capacitance (C) components in series has been utilized to describe the individual impedance contribution from the lead of cross pattern, barrier, and interface. The resistance (R-barrier) and capacitance (C-barrier) of the barrier effect are functions of V-Os. The R-barrier decreases as the V-Os increases, However, Cbarrier behaves the opposite way. The tendency is for interfacial resistance R-interface and interfacial capacitance C-interface to have opposite results with increasing V-Os. This work provides a detailed investigation of high-frequency transport behavior subjected to V-Os, especially useful for MTJ characterization. |
收录类别 | SCI |
公开日期 | 2013-09-23 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/46837] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Young, SJ,Ji, LW,Chang, SJ,et al. ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes[J]. IET OPTOELECTRONICS,2007,1(3):135. |
APA | Young, SJ.,Ji, LW.,Chang, SJ.,Chen, YP.,Lam, KT.,...&Sun, YS.(2007).ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes.IET OPTOELECTRONICS,1(3),135. |
MLA | Young, SJ,et al."ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes".IET OPTOELECTRONICS 1.3(2007):135. |
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